JPS54883A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of field effect transistor
Assignee: Fujitsu Ltd
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To enhance the characteristics at the high frequency region, by covering part of the upper surface of the concave groove provided to the semiconductor substrate with a metal layer and then forming the insulator and the gate metal layer only at the bottom part of the concave groove through the evaporation given from the olbique direction in case a channel region is formed to the inner circumference surface of the concave groove. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Toshio Usui
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 13:40
CPC Classifications
—
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