JPS54881A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To avoid the short circuit occurring between the source and drain for the semiconductor device in which an insulating layer is buried between the source region and the smiconductor substrate as well as between the drain region and the semiconductor substrate, by setting the width of the channel forming region narrower than the aperture width drilled to the insulator layer. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 10:12
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0278; H10D30/60; H10D30/67; H10D30/6704; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D62/40; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258
Claims Analysis
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References Cited (Backward Citations)
JPS49112574A
Cited
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