Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To obtain an electrode which is mechanically and chemically stable by stacking a Cr layer as a contact metal layer and Au thin film on a semiconductor- substrate electrode part, by providing an Ag protruding electrode on it by electrolytic plating and by removing unneeded parts of the Au thin film and Cr by etching. CONSTITUTION: Onto N-type Si substrate 1, SiO 2 film 2 is adhered and after a window is made, P-type region 4 is formed in exposed substrate 1 through diffusion. Next, film 2 generated in one is provided with window 3 for an electrode to expose one part of region 4, the Cr layer 5 and thin Au film 6 are vapor-deposited on the entire surface by being stacked. Then, reverse-surface electrode 7 is provided onto the reverse surface of substrate 1 and the unneeded part of film 6 is removed by photoetching. Next, photo resists film 8 is applied here and electrolytic plating is done over a protecting of layer 5, thereby forming Ag protruding electrode 9 in a hemisphere shape on film 6. Then' unneeded parts of film 8 and layer 5 are removed. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Misao Saga
• 👤 Akira Amano

Bibliographic Details