JPS548474A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Gate protection unit
Assignee: Hitachi Ltd
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Filing: 1977-06-22
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Granted: —
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Expires: 1997-06-22
Abstract
Abstract PURPOSE:To remarkable increase the static breakdown strength of MOSFET gate, by forming the gate region thinner and fitting electrodes at the both ends, and by connecting one to the gate electrode of MOSFET and by taking another as the gate input terminal, in the gate protection unit having the diodes in anti parallel connection.
Inventors
- 👤 Isao Yoshida
- 👤 Shigeo Ishii
- 👤 Masatomo Furuumi
- 👤 Masaru Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 17:09
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601
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