Vapor growth method for semiconductor layer

Abstract

Abstract PURPOSE:To obtain a uniform vapor growing film by introducing the reaction material gas along the gas current direction within the reaction container and in a complementary way in order to secire the uniform gas concentration. CONSTITUTION:N2 and then H2 are flowed into the furnace in which Si substrate 41 is put and and then heated up to 1150 deg.C. Then HCl is supplied to etch the surface of the substrate, and then H2 is flowed. The H2 is controlled 50 to 5l per minute and exhausted 62, and bubbler 56 is kept at 20 deg.C. Then PH3+H2 ia controlled 60 to 10ml per minute and mixed. During this time, the flow amount of device 63, 65 and 67 are set to 12l, 1.2l and 1l respectively, and the optimum flow amount is varied according to the size of the furnace, the position of the nozzle and others. Valve 61 is opened slightly and then valves 64, 66 and 68 are opened in sequence to supply the reaction gas into the furnace. After the desired growth is given, valves 64, 66 and 68 are clos ed with valve 61 opened, and H2 is flowed into the furnace. Then the heat is applied into the furnace and stopped, and the substrate is lowered down to about the room temperature with H2 flown in. In such way, the gas is set to a uniform concentration to carry out the vapor growing. Thus, the extremely good distribution widt of + or -4% and + or -8% can be secured for the film thick ness and resistance factors respectively.

Inventors

• 👤 Takaya Suzuki

Bibliographic Details