JPS547882A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture for semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-06-21
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Granted: —
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Expires: 1997-06-21
Abstract
Abstract PURPOSE: To constitute high break down voltage oxide film formed, by performing oxidation through inserting a polycrystal layer under a Si 3 N 4 film after SiO 2 film formation and by removing deficiency. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Takashi Yabu
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 18:49
CPC Classifications
—
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