JPS546767A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: NEC Corp
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Filing: 1977-06-17
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Granted: —
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Expires: 1997-06-17
Abstract
Abstract PURPOSE: To obtain an effective getter effect by irradiating the laser beam through the rear surface of the semiconductor substrate to form the crystal grid strain reaching the substrate surface and thus forming a strain suitably with a necessary density under a clean condition. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Masahiko Nakamae
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 17:32
CPC Classifications
—
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