JPS546480A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Denso Corp
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Filing: 1977-06-16
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Granted: —
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Expires: 1997-06-16
Abstract
Abstract PURPOSE: To reduce the time aging of breakdown voltage and to increase the current capacity, by forming PN junction so that it is not exposed on the substrate surface and making the impurity concentration of each region constituting PN junction uniformly high for all the regions. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Katsuyoshi Oda
- 👤 Hiroshi Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 10:03
CPC Classifications
—
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