JPS54589A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Burying method of insulator
Assignee: Hitachi Ltd
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To flatten the surface of insulating and isolating regions by first forming a shallow polycrystalline Si layer within grooves thereafter oxidizing said layer to an insulator and further burying the recesses having been produced on the insulator surface by the use of a similar method at the time of burying the insulator within the grooves provided to a semiconductor substrate. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Mitsuo Nanba
- 👤 Hisayuki Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-26 22:40
CPC Classifications
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