Zener diode

Abstract

Abstract PURPOSE: To establish the Zener diode of high reliability as for DHS(double heat sink), by providing the bump electrode via the wiring layer on the diode, through the provision of diode on the substrate at the output side of temperature compensation type diode. CONSTITUTION: The region 2 being transistors T1 to T3, and the region 3 being resistor R1 to R4 and diodes D1 to D3 are formed on the n type substrate 1. At the location apart from those, the diode D4 is formed by placing the p layer 7. Opening window is made to the oxide film 4 on it, the wiring layer connected to the regions 2 and 3 is provided, Ag bump electrode 8 is made and it is covered with PSG 6. with this constitution, in evaporating the wiring layer 5, the evaporated metal is slightly diffused in the substrate, increasing the bonding force with the substrate and the bump electrode. The performance can be improved and the DHS Zener element with high reliability can be obtained COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Hiroshi Ikeda

Bibliographic Details