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JPS5458359A Expired / Lapsed JP ⏱️ 0.0 years remaining

Package and semiconductor device providing it

Assignee: Hitachi Ltd
•
Filing: 1977-10-19
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Granted: —
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Expires: 1997-10-19
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Abstract

Abstract PURPOSE:To increase thermal dissipation and to increase the mounting density, by making air-tight sealing for the semiconductor element having PN junction, in the package using silicon as the package material and taking the silicon as the base. CONSTITUTION:On the package 2 consisting of silicon, Au-Si eutectic alloy layer 3 is passed thru the LSI chip 1, and the insulation film 4 of silicon oxide or silicon nitride is coated on the main body 2 by surrounding it. Next, on the film 4, the conductive wiring 5 is made and bonding is made by using the chip 1 and the gold fine wire 6, and the wiring 5 is bonded with the external lead terminal 7 with solder 8. After that, the fixing material 10 is used for the upper part such as low melting point glass, and similarly, the package cover 9 of silicon is covered and air tight seal is made. Thus, the silicon excellent by 5 times for the thermal conductivity in comparsion with aluminum convertionally used is used and the heat dissipation can be increased.

Inventors

  • 👤 Kanji Otsuka
  • 👤 Tamotsu Usami

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 00:11
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/851; H10W72/874; H10W72/884

Claims Analysis

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References Cited (Backward Citations)

US3517278A Cited

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