Thyristor

Abstract

Abstract PURPOSE:To obtain a minute-pattern gate electrode and prevent the short-circuit to a terminal block by fixing the one-plate cathode electrode terminal block onto a cathode electrode after covering the upper face of a thyristor element substrate with plural thick cathode electrodes and thin gate electrodes, which are positioned between cathode electrodes, alternately. CONSTITUTION:Plural N-type cathode areas are formed on the upper face of PNP thyristor element substrate 1, and thick cathode electrode 3a consisting of an Al evaporation film is caused to adhere to these areas. Next, gate electrode 2a which is thinner than electrode 3a and consists of the same Al evaporation film as electrode 3a is caused to adhere to the part between cathode areas, and the part between cathode areas are filled up by insulating film 7 such as polymide varnish materials while covering electrode 2a. After that, the difference in height between electrodes 2a and 3a is utilized to fix one-plate Mo cathode electrode terminal block 4a onto electrode 3a while generating space on film 7, and anode electrode terminal block 6 is fitted to the reverse face of substrate 1. Thus, it is unnecessary to provide cut parts in terminal block 4a.

Inventors

• 👤 Tatsuo Miyajima

Bibliographic Details