Production of semiconductor element

Abstract

Abstract PURPOSE: To improve an electrical characteristic by injecting H + and H + 2 ions to the interface between a Si substrate and a sticked layer or the substrate side and annealing them. CONSTITUTION: BSG3 is laminated on SiO 2 film 2 on a Si substrate after forming an aperture, and H + and H + 2 ions are injected to distribute them to the interface between the substrate and film 2 or the substrate side. Next, they are heated in a neutral atmosphere to form base layer 4. Next, apertures are formed selectively in films 3 and 2 to laminate PSG5, and the substrate is heated in a neutral atmosphere to form emitter layer 6 and collector connection layer 7. By this method, β becomes higher, and the leakage current is lowered with a high dielectric strength, so that the electrical characteristic can be improved COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Kuniaki Kumamaru
• 👤 Shunichi Kai

Bibliographic Details