Semiconductor device

Abstract

Abstract PURPOSE:To avert electrode separation of bonding parts by letting the kinds of metals used differ with the portions from contact windows up to bonding pads and pad portions at the time of providing lead-out electrodes to semiconductor devices. CONSTITUTION:A base region 4 is diffusion-formed in a semiconductor substrate 5 which becomes a colloctor region, and an emitter region 3 is provided therein, after which a SiO2 film 1 is deposited over the entire surface. Next, contact windows for the regions 3, 4 are opened, and platinum is evaportated and is then heated, producing platinum silicide 2 in the windows. The platinum on the film 1 is etched away. Thereafter, an Al layer 7 is evaporated over the entire surface and the layer 7 is formed only on bonding parts by using a photo resist 6. The resist 6 is renewed to 11, after which a Ti layer 10, Pt layer 9, Au layer 8 are laminated and evaporated over the entire surface. Next, composite layers are left from the window inside up to one end of the Al layer 7 of the bonding parts by a lift off method.

Inventors

• 👤 Terusumi Takei

Bibliographic Details