JPS544079A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Sony Corp
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Filing: 1977-06-10
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Granted: —
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Expires: 1997-06-10
Abstract
Abstract PURPOSE:To prevent the decrease in dielectric strength between the source and the drain, by forming a V-shaped groove so that it intersect the junction surface orthogonally with the curved part on the PN junction surface of double diffusion region.
Inventors
- 👤 Hidemi Takakuwa
- 👤 Akiyasu Ishitani
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 16:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668
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