JPS544064A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture for semiconductor device
Assignee: Hitachi Ltd
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Filing: 1977-06-13
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Granted: —
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Expires: 1997-06-13
Abstract
Abstract PURPOSE: To prevent the lowering in the elemnent performance due to heavy metal and crystal defect, by providing the processing strain layer having the gettering operation of heavy metal the rejecting operation of crystal defects on the semiconductor main surface artifically. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Manabu Matsuzawa
- 👤 Yoshimitsu Sugita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 13:15
CPC Classifications
—
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