JPS543470A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Etching method
Assignee: Hitachi Ltd
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Filing: 1977-06-10
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Granted: —
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Expires: 1997-06-10
Abstract
Abstract PURPOSE: To obtain an oxide film containing no roundness at the shoulder part only on the poly-crystal layer, by forming the oxide film and the poly-crystal Si layer of a high impurity concentration onto the prescribed region of the semiconductor substrate and coating an oxide film plus a glass layer containing Ge or Ge and P only on the Si layer to remove the layer through etching. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Yuji Tanida
- 👤 Hideo Sunami
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 09:56
CPC Classifications
—
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