JPS5423391A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Gallium-arsenic semiconductor element
Assignee: NEC Corp
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Filing: 1977-07-22
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Granted: —
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Expires: 1997-07-22
Abstract
Abstract PURPOSE: To obtain a luminous element which is large in luminescence efficiency and fast in response speed, by vaporphase-epitaxial-growing a N-type layer obtained by doping Si on a GaAs substrate and by starting growth on it from a lower temperature than an inversion temperature using a solution with Si for the liquid-crystal epitaxial growth of a P-type layer. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Yoshiyuki Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-27 23:51
CPC Classifications
—
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References Cited (Backward Citations)
JPS5136586A
Cited
JPS5286059A
Cited
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