Semiconductor device

Abstract

Abstract PURPOSE:To turn off the anode current of more than 700A with the gate signal with the thickness of the n base layer set more than 350mum and the specific resistance set to 20OMEGAcm or more. CONSTITUTION:Anode layer 1 and base layer 3 featuring the B diffusion surface density of 1 X 10<8>/cm<3> are formed on both surfaces of n-type Si substrate 2 featuring 450mum thickness and about 150OMEGAcm specific resistance. The phosphorus is diffused to layer 3 to form the n layer and then to be divided through the selective etching, thus obtaining cathode layer 4. With formation of layer 4, the multi-emitter structure is constituted substantially. Then gate electrode 3a, anode electrode 1a and cathode electrode 4a are drawn out from p base layer 3, p anode layer 1 and cathode layer 4 respectively. Package electrode 11a and 14a are provided to electrode 1a and 4a each, and the GTO is formed with pressure ponding from electrode 14a through the arrow direction. This GTO features 350mum thick and the specific resistance of 20OMEGAcm or more for n base layer 2, and thus can turn off the anode current up to 950A with gate current 165A.

Inventors

• 👤 Akio Nakagawa
• 👤 Tadashi Utagawa

Bibliographic Details