Manufacture of beam lead type semiconductor device

Abstract

Abstract PURPOSE: To form a mechanically strong lead by changing the chip periphery on the surface of the semiconductor substrate into the porous oxide, forming the beam lead crossing the oxide from the element part provided inside the chip and giving etching from the back of the substrate. CONSTITUTION: Porous layer 3 of about 5μ is provided at the fixed area of n- epitaxial layer 2 on n + Si substrate 1 and then turned to oxide 4 through the heat treatment, thus obtaining SiO 2 5. Then high-density layer 6 for ohmic connection plus Schottky electrode 7 are formed to layer 2 between layers 4, and then metal conductor 8 is formed selectively. After this, the back surface of substrate 1 polished up to a fixed thickness, and the etching is applied to the areas except for film 4 and substrate 1 under film 4 for removal. In such constitution, the contact area can be comparatively increased between the beam lead and the element part without increasing the floating capacity owing to a large thickness of film 4, also securing a large mechanical strength. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Takeshi Kajimura

Bibliographic Details