Manufacture of semkconductor device

Abstract

Abstract PURPOSE: To form a channel stopper featuring a narrower width than the field oxide film without increasing the mask manufacturing processes and via the softening of the resist film. CONSTITUTION: Si 3 N 4 film 30 is provided to SiO 2 20 on P-type Si substrate 10, and resist pattern 40 through the photo etching to etch film 30. Pattern 40 is then softened and liquefied in N 2 and at about 200°C with a larger width than remaining Si 3 N 4 film. The B ion is injected onto the substrate surface via the resist mask, and then the resist is removed. Then the selective oxidation is given using film 30 as the mask, and thus the B diffusion is given simultaneously to form field oxide film 25 and P + -type channel stopper 50. After this, film 30 is removed and film 20 is removed when necessary to form the stack element on the substrate. As the channel stopper width is sufficiently smaller than the width of the field oxide film. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Takehide Shirato

Bibliographic Details