Manufacture for semiconductor device

Abstract

Abstract PURPOSE: To establish the bonding method between bump and leads, which can effectively prevent the side etching lower the Au bump and can easily perform Au- Au press bonding. CONSTITUTION: The Au bump 1 is formed on the specified wiring layer 4 via the back ground metal film 3 formed on the insulation film covering the surface of the semiconductor pellet 2 with selective Au plating through the use of the photo mask 5. The layer 6 is the first SiO 2 layer formed with thermal oxidation and the layer 7 is the second SiO 2 layer formed with CVD. Next, after providing Sn plating thinly on the surface of the Au bump 1, the photo mask is removed. Further, the unnecessary part of the back ground metal film 3 is removed with etching. Then, one end of the Cu lead 10 sticked on the carrier tape 9 made of polyimide resin is pressed on the Au bump 1 via the Sn film 8 of the Au bump 1, and the bonding of the bump 1 and the lead 10 is finished. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Toru Kawanobe
• 👤 Keiji Miyamoto

Bibliographic Details