JPS5397381A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Nonvoltile semiconductor memory
Assignee: Toshiba Corp
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Filing: 1977-02-07
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Granted: —
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Expires: 1997-02-07
Abstract
Abstract PURPOSE:To increase both the writing and the reading velocity, by pushing in the high-density ion injection layer through the lateral diffusion only form the drain side using the floating gate as the mask and securing a density slope in the channel direction.
Inventors
- 👤 Hiroshi Nozawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 03:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681
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