JPS5384691A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-12-29
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Granted: —
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Expires: 1996-12-29
Abstract
Abstract PURPOSE: To increase density of gate channels by implanting ions parallel to the crystal axis direction of a semiconductor substrate. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hidetoshi Nishi
- 👤 Tsuguo Inada
- 👤 Teruo Sakurai
- 👤 Tsuneo Furuya
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 18:12
CPC Classifications
—
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