JPS5384571A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulating gate type field effect transistor and its manufacture
Assignee: Fujitsu Ltd
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Filing: 1976-12-29
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Granted: —
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Expires: 1996-12-29
Abstract
Abstract PURPOSE: To manufacture IG FET having no punch through between the source and the drain and also having less parasitic capacitance between the substrate and the sourece or the drain. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Kazunori Imaoka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 05:18
CPC Classifications
—
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References Cited (Backward Citations)
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