JPS5384485A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mos-type semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-12-29
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Granted: —
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Expires: 1996-12-29
Abstract
Abstract PURPOSE:To increase the operation speed as well as the integrated density by forming the C-MOS through the 2-stepped diffusion self-matching method to secure a desired channel length.
Inventors
- 👤 Hitoshi Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 15:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85
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