JPS5384483A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-12-29
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Granted: —
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Expires: 1996-12-29
Abstract
Abstract PURPOSE: To increase further the dielectric strength of a high dielectric strength transistor, by turning the base-collector junction surface down to use it as the concaved surface of a convexity and making cross the concaved surface the second mesa ethed curved surface at the curved side surface other than the flat surface of the concave surface. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Juichi Osuzu
- 👤 Ryosuke Namazu
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 04:47
CPC Classifications
—
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