JPS538088A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-07-12
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Granted: —
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Expires: 1996-07-12
Abstract
Abstract PURPOSE:To produce a memory LSI built with MIS type capacitors of a small area and a large capacity by burying thermally oxidized Si in the pin holes existing beforehand in Si3N4 film.
Inventors
- 👤 Seiichi Iwamatsu
- 👤 Yukio Tanigaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 15:36
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
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References Cited (Backward Citations)
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