JPS5378180A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-12-22
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Granted: —
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Expires: 1996-12-22
Abstract
Abstract PURPOSE: For the easing of the electric field at a junction boundary, the insulating film containing the impurity of a large diffusion coefficient in addition to the impurity of a small diffusion coefficient is used for covering and diffusing the junction boundary via the oxidized film between thin films, thereby improving the dielectric strength. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yoshiaki Kamigaki
- 👤 Hiroo Masuda
- 👤 Yuji Tanida
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 19:31
CPC Classifications
—
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