JPS5377481A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Prodiction of semionductor substrate
Assignee: NEC Corp
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Filing: 1976-12-21
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Granted: —
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Expires: 1996-12-21
Abstract
Abstract PURPOSE: To improve characteristic of a charge moving degree and lead and avoid disconnection of metallic wiring in the boundary area with obtaining the clearance area at a low temperature in a short time by injecting high-density impurity ions into the clearance area of the monocrystal Si layer which is grown on the insulating substrate and converting them to SiO 2 by oxidizing. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hideto Goto
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 01:06
CPC Classifications
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