JPS5376677A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NEC Corp
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Filing: 1976-12-17
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Granted: —
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Expires: 1996-12-17
Abstract
Abstract PURPOSE:To expand the allowable range of gate input voltage and prevent parasitic thyristor effect by connecting the diodes by the polycrystalline silicon thin-films formed on the insulation film on the surface of a substrate in a reverse direction.
Inventors
- 👤 Minoru Araki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 04:58
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611
Claims Analysis
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References Cited (Backward Citations)
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