JPS5375862A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Surface stabilization method of semiconductor
Assignee: Fuji Electric Co Ltd
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Filing: 1976-12-17
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Granted: —
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Expires: 1996-12-17
Abstract
Abstract PURPOSE: To reduce the fast surface level of Si-SiO 2 interface and stabilize surface characteristics by subjecting the wafers of Si-SiO 2 structure having completed high temperature treatment such as diffusion to heat treatment at a temperature of 500 to 1000°C within a carrier gas such as N 2 , O 2 , Ar having a moisture concentration of 50 to 200 ppm. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takeshige Ichimura
- 👤 Akihiko Kitamura
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 00:07
CPC Classifications
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