JPS5372571A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-12-10
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Granted: —
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Expires: 1996-12-10
Abstract
Abstract PURPOSE: To ensure a clean oxide thick film in a short time by flowing H 2 and O 2 directly into a tube which is stored into a high anti-pressure container and oxidizing the Si substrate by burning in the high-pressure vapor. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Natsuo Tsubouchi
- 👤 Hirokazu Miyoshi
- 👤 Akira Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 04:09
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS50114179A
Cited
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