JPS5367372A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mos-type field effect transistor
Assignee: Hitachi Ltd
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Filing: 1976-11-29
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Granted: —
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Expires: 1996-11-29
Abstract
Abstract PURPOSE: To reduce the variation of element characteristics due to the DC bias of a MOSFET by forming a conduction-type impurity layer different with the substrate formed by an ion-implantation method, etc. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hiroo Masuda
- 👤 Yoshiaki Kamigaki
- 👤 Kiyoo Ito
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 03:37
CPC Classifications
—
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