JPS5366380A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Power transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1976-11-26
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Granted: —
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Expires: 1996-11-26
Abstract
Abstract PURPOSE:To improve the yield rate reduction due to local short circuit of the emitter electrode and the base electrode, by providing conducting material b blown with a current more than the specified current between the emitter layers of a plurality independently provided on the base layer and the total electrode connected to them.
Inventors
- 👤 Yoshihiko Watari
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 22:45
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121
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