JPS5366181A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
High dielectric strength mis type transistor
Assignee: Hitachi Ltd
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Filing: 1976-11-26
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Granted: —
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Expires: 1996-11-26
Abstract
Abstract PURPOSE: To produce a MISFET of small on-resistance and high breakdown voltage by disposing an N type layer in adjacent to the N + type drain layer of an N - type Si substrate and providing the electrode of the same potential as that of the source through an insulation film on the N type layer. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Hideshi Ito
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 17:24
CPC Classifications
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