Patent US4742338A successfully refreshed from Google Patents.
JPS5364483A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
1 transistor memory element and its production
Assignee: Hitachi Ltd
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Filing: 1976-11-22
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Granted: —
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Expires: 1996-11-22
Abstract
Abstract PURPOSE:To increase accuracy and improve characteristics such as S/N ratio, refresh time, etc. by providing a gate to a memory element by a 1-layer polycrystalline process and providing the polycrystalline film of storage ares by a 2layer polycrystalline process.
Inventors
- 👤 Kenjiro Yasunari
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 21:09
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
Total Claims: 0
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