JPS5363879A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-11-18
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Granted: —
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Expires: 1996-11-18
Abstract
Abstract PURPOSE:To improve the characteristics of the memory elements of double layer crystal Si structure by improving the insulation breakdown strength between poly-Si of first layer, second layers and reducing pinholes.
Inventors
- 👤 Tsutomu Yoshihara
- 👤 Masahiro Hatanaka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 20:51
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30
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