JPS5348481A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-10-15
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Granted: —
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Expires: 1996-10-15
Abstract
Abstract PURPOSE: To reduce the number of times of heat treatment and prevent the production of P impurity spots by opening a hole for base contact part formation on the surface oxide film after a base region has been formed, covering the surface with a PSG film, exposing part of the base region and performing emitter diffusion and at the same time diffusing the P impurity from the PSG film thus forming a base contact part. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Keizo Inaba
- 👤 Shoei Kokubu
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 08:18
CPC Classifications
—
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