JPS5344170A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-10-05
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Granted: —
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Expires: 1996-10-05
Abstract
Abstract PURPOSE:To improve crystallinity by ion implanting an inert substance to the silicon layer epitaxially grown on sapphire to break its crystallinity thereafter heat treating and recrystallizing said layer at a temperature lowee than the crystal growth temperature.
Inventors
- 👤 Motoo Nakano
- 👤 Yoshiiku Togei
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 03:57
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS5038838A
Cited
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