JPS5338278A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-09-20
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Granted: —
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Expires: 1996-09-20
Abstract
Abstract PURPOSE: To make a three-dimensionally integrated device by alterntely laminating Al 2 O 3 and Si of single crystal, and selectively forming SiO 2 by performing thermal oxidation through the Al 2 O 3 with a Si 3 N 4 film as a mask. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Masaru Ihara
- 👤 Koichi Nishiuchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-23 13:03
CPC Classifications
—
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