JPS5338263A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Plasma treating apparatus of semiconductors
Assignee: Toshiba Corp
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Filing: 1976-09-21
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Granted: —
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Expires: 1996-09-21
Abstract
Abstract PURPOSE: To prevent temperature rise of the objects to be etched by parting a plasma treating chamber and a generating part by means of static magnetic field screens. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Sakae Takei
- 👤 Masayuki Ishibashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-08 23:45
CPC Classifications
—
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