JPS5335481A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of insulating gate type field effect transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1976-09-14
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Granted: —
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Expires: 1996-09-14
Abstract
Abstract PURPOSE: In case of forming a gate area, impurity ions are injected with the inclination of a prescribed angle with respect to the substrate surface, so that a length can be short and the production course can be simplified. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Yutaka Torii
- 👤 Isao Okura
- 👤 Masashi Omori
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 09:02
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS4877773A
Cited
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