JPS5331979A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulated gate type field effect semiconductor device
Assignee: NEC Corp
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Filing: 1976-09-06
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Granted: —
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Expires: 1996-09-06
Abstract
Abstract PURPOSE: To increase the inversion layer forming voltage on surface and reduce the parasitic leakage of IGFETs by lowering the impurity concentration of the channel stoppers of the portions adjoining or in proximity to source, drain regions to suppress the decrease in junction breakdown voltage and the increase in junction capacity and raising the concentration at the protions away from the junction part. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Toshio Oota
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 10:52
CPC Classifications
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