JPS533077A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Charge transfer device
Assignee: Hitachi Ltd
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Filing: 1976-06-30
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Granted: —
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Expires: 1996-06-30
Abstract
Abstract PURPOSE:To obtain a CTD having high S/N and transfer efficiency by forming perpendicular grooves through anisotropic etching in a substrate of Si [110] plane and increasing channel area through lamination of a SiO- film and transfer electrode.
Inventors
- 👤 Hideo Sunami
- 👤 Mitsumasa Koyanagi
- 👤 Toshiaki Masuhara
- 👤 Norio Koike
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 23:21
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45
Claims Analysis
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