Production of schottkey barrier gate field effect transistor

Abstract

Abstract PURPOSE: Response characteristics for high frequencies are improved by integrally forming protrusion parts perpendicularly to substrate surface, providing electrodes to the top surface thereof and the rear of the substrate and providing gate electrodes extending to the substrate surface on the outside circumference of the protrusion parts thereby forming FETs for high frequencies. COPYRIGHT: (C)1978,JPO&Japio

Inventors

• 👤 Masao Uchida

Bibliographic Details