JPS5326587A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of buried channel charge transfer unit
Assignee: Fujitsu Ltd
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Filing: 1976-08-24
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Granted: —
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Expires: 1996-08-24
Abstract
Abstract PURPOSE:The resistance film which becones a resistance against passage of impurity ions is made thinner in the charge accumulation part of a channel and thicker in the charge barrier part, and is caused to adhere on a semiconductor substrate. Then, impurity ions are injected through this, so that the accumulation part and the barrier aprt can be formed in one ion injection process simultaneously.
Inventors
- 👤 Yoshihiro Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 06:37
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462
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