Layer thickness control me thod of epitaxial growth layer

Abstract

Abstract PURPOSE:In case of epitaxial growth of a Si layer on a Si bustrate in a quartz cylindrical pipe, a dummy substrate of sapphier, etc., where Si monocrystal adheres on the surface is enclosed, and a growth speed where Si layer grows on the Si substrate and the dummy substrate are made equivalent. As a reuslt, a layer thickness on the dummy substrate is notified by interference light, thereby controlling the layer thickness accurately.

Inventors

• 👤 Katsuo Sugawara
• 👤 Noriyoshi Nakazawa

Bibliographic Details