JPS5317068A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device and its production
Assignee: Fujitsu Ltd
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Filing: 1976-07-30
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Granted: —
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Expires: 1996-07-30
Abstract
Abstract PURPOSE: A semiconductor device of a small parasitic capacity is obtained by forming a SiO 2 film on the substrate via the sapphier film formed on a Si single crystal substrate, then epitaxially forming a Si single crystal layer in lamination. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Masaru Ihara
- 👤 Akira Osawa
- 👤 Hideki Yamawaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 21:36
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS50141283A
Cited
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