JPS5315772A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mis semiconductor device and its production
Assignee: Hitachi Ltd
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Filing: 1976-07-28
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Granted: —
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Expires: 1996-07-28
Abstract
Abstract PURPOSE: The variations in Vth are obviated and a MIS semiconductor device of a high breakdown voltage and a small element size is obtained by forming channel regions in the bulk of a Si wafer. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Seiichi Iwamatsu
- 👤 Yukio Tanigaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 03:08
CPC Classifications
—
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